| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流ICCollector Current(IC) |
2A |
| 截止频率fTTranstion Frequency(fT) |
200MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
300mV/0.3V |
| 耗散功率PcPower Dissipation |
2W |
| Description & Applications |
NPN Epitaxial Planar Silicon Transistor POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.2 V • high DC current Gain ：HFE135 to 600 |
| 描述与应用 |
NPN平面外延硅晶体管 POWER迷你模具 说明 2SD1615，1615A音频功放和开关应用而设计的，特别是 混合集成电路。 特点 •世界标准小型封装 •低VCE（sat）的VCE（饱和）=0.2 V •高直流增益：HFE135600 |