| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 700mA/0.7A |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 10mV |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | Silicon Transistor Low-Voltage High-Current Amplifier, Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. |
| 描述与应用 | 硅晶体管 低电压高电流放大器， 特点 ·低集电极 - 发射极饱和电压。 ·体积非常小，因此很容易提供高密度，小尺寸的混合集成电路。 |