| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 5A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~320 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | Applications *NPN epitaxial planar silicon transistor *strobes DC-DC converters,relay drivers, hammer drivers,lamp drivers，motor drivers Features * large current capacity * Low saturation voltage * high HFE |
| 描述与应用 | 应用 * NPN硅外延平面型晶体管 *频闪灯DC-DC转换器，继电器驱动器，锤驱动，灯驱动器，电机驱动器 特点 *大电流容量 *低饱和电压 *高HFE |