| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 30MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1.2V |
| 耗散功率PcPower Dissipation | 1.3W |
| Description & Applications | Silicon NPN triple diffusion planar type low freauency power amplification Features *High forward current transfer ratio hFE which has satisfactory linearity * Low collector to emitter saturation voltage VCE(sat) * I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. |
| 描述与应用 | 硅NPN三重扩散平面型 低freauency功率放大 特点 *高HFE正向电流传输比，具有良好的线性 *低集电极到发射极饱和电压VCE（SAT） * I型包，使散热片直接焊接 在印刷电路板等的小型电子设备。 |