集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流ICCollector Current(IC) | 5A |
截止频率fTTranstion Frequency(fT) | 150MHz |
直流电流增益hFEDC Current Gain(hFE) | 120~390 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率PcPower Dissipation | 1W |
Description & Applications | applications Low VCE(sat) Transistor(Strobe flash) Features * Low VCE(饱和). VCE(饱和) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) * Excellent DC current gain characteristics. structure Epitaxial planar type NPN silicon transistor |
描述与应用 | 应用 低VCE(sat)的晶体管(频闪闪光) 特点 *低VCE(饱和)。 VCE(饱和)= 0.25V (IC / IB= 4A/0.1A) *优异的DC电流增益特性。 结构 外延平面型 NPN硅晶体管 |