| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
31V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
31V |
| 集电极连续输出电流ICCollector Current(IC) |
2A |
| 截止频率fTTranstion Frequency(fT) |
100MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
120~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率PcPower Dissipation |
500mW/0.5W |
| Description & Applications |
*Power Transistor *features *Built-in zener diode between collector and base. *Zener diode has low voltage dispersion. *Strong protection against reverse power surges due to low loads. PC=2 W (on 40×40×0.7mm ceramic board) |
| 描述与应用 |
*功率晶体管 特点 *内置的集电极和基极之间的齐纳二极管。 *齐纳二极管具有低电压分散。 *强逆功率保护潮 低负荷。 PC=2 W（40×40×0.7毫米的陶瓷板） |