集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 400V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 400V |
集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
截止频率fTTranstion Frequency(fT) | 13.5MHz |
直流电流增益hFEDC Current Gain(hFE) | 82~270 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率PcPower Dissipation | 10W |
Description & Applications | Power Transistor (400V, 0.5A) Features 1) High breakdown voltage.(BVCEO=400V) |
描述与应用 | 功率晶体管(400V,0.5A) 特点 1)高的击穿电压(BVCEO= 400V) |