| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 130~220 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB767 Features Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | NPN硅外延平面型 对于低频功率放大互补2SB767 特点 大集电极功耗PC。 高集电极发射极电压VCEO。 迷你功率型封装 通过自动插入带包装盒包装。 |