| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -100mA/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 9Ω @-10mA,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.5 |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | Silicon P-channel MOSFET For switching circuits Features Low ON resistance R Low ON resistance Ron Low ON resistance Ron High-speed switching High-speed switching SSSMini type package, allowing downsizing of the equipment and SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | “硅P沟道MOSFET 用于开关电路 特性 低导通电阻R低ON电阻Ron 低导通电阻Ron 高速开关高速开关 型包装SSSMini，允许的的设备和SSSMini型封装的小型化，使设备小型化，并 通过自动插入磁带包装 |