| 最大源漏极电压VdsDrain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -100mA/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 150Ω @-10mA,-5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.5--3.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon P-Channel MOS FET For switching Features High-speed switching Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | 硅P沟道MOS FET 用于开关 特性 高速开关 迷你型包装，使设备小型化和自动 通过插入磁带/盒包装 |