| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.4Ω @-500mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -2.2--3.0 |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance Bidirectional zener diode for protection is incorporated between gate and source Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between drain and source |
| 描述与应用 | MOS场效应晶体管 P-通道 MOS FET 用于高速开关 直接驱动5V电源IC 具有低导通电阻 保护纳入栅极和源极之间双向齐纳二极管 可以驱动感性负载没有保护电路由于漏极和源极之间的击穿电压提高 |