| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.68Ω @-500mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8--2.0V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | field effect transistor silicon p channel mos type high speed, high current dc-dc converter, relay drive and motor drive applications 4-volt gate drive low drain-source on resistance high forward transfer admittance high forward transfer admittance low leakage current enhancement mode |
| 描述与应用 | 场效应晶体管的 硅p沟道MOS类型 高速，高电流DC-DC转换， 继电器驱动器和电机驱动应用 4伏栅极驱动 低漏源电阻 高正向转移导纳 高正向转移导纳 低漏电流 增强模式 |