| 最大源漏极电压VdsDrain-Source Voltage | -16V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.54Ω @-1A,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.7V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2.5V gate drive low drain-source on resistance high forward transfer admittance low leakage current enhancement mode |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS型 2.5V栅极驱动 低漏源电阻 高正向转移导纳 低漏电流 增强模式 |