| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -0.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.5Ω -@1A,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. |
| 描述与应用 | •低导通电阻 RDS（ON）=0.18Ω（典型值）。（VGS=10V，ID=-1A） •低驱动电流 •高速开关 •4V栅极驱动装置。 |