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商品参数:

  • 型号:2SJ610
  • 厂家:TOSHIBA
  • 批号:10+rohs 10+ROHS
  • 整包数量:2000
  • 最小起批量:10
  • 标记/丝印/代码/打字:J610
  • 封装:TO-252/DPAK
  • 技术文档:下载

最大源漏极电压VdsDrain-Source Voltage-250V
最大栅源极电压Vgs(±)Gate-Source Voltage20V
最大漏极电流IdDrain Current-2A
源漏极导通电阻RdsDrain-Source On-State Resistance1.85Ω @-10A,-10V
开启电压Vgs(th)Gate-Source Threshold Voltage-1.5--3.5V
耗散功率PdPower Dissipation20W
Description & ApplicationsFeatures •Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) •High forward transfer admittance: Yfs = 1.8 S (typ.) • Low leakage current: IDSS = −100 µA (VDS = −250 V) • Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA)
描述与应用•低漏源导通电阻RDS(ON)= 1.85Ω(典型值) •高正向转移导纳:的YFS=1.8 S(典型值) •低漏电流:IDSS=-100μA(VDS=-250 V) •增强模式:VTH=-1.5〜-3.5 V(VDS=10V,ID=1毫安)
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深圳市爱瑞凯电子科技有限公司
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2SJ610
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