最大源漏极电压Vds Drain-Source Voltage | 16V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 5V |
最大漏极电流Id Drain Current | 30mA |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | |
耗散功率Pd Power Dissipation | 150mW/0.15W |
Description & Applications | N-Channel MOS Silicon FET FM Tuner,VHF-Band Amp Applications Low noise NF=1.8dB typ.(f=100MHz) Small reverse transfer capacitance c=0.035pF Very small-sized package(MCP) permitting 2SK1.67-applied size to be made smaller and slimmer |
描述与应用 | N沟道MOS硅FET VHF波段FM调谐器,放大器应用 低噪声NF=1.8分贝典型。(F=100MHz的 小反向传输电容C=0.035pF 非常小的封装(MCP允许2SK1.67应用大小变得更小,更薄 |