| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.2~0.45ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1~1v |
| 耗散功率PdPower Dissipation | 80mw |
| Description & Applications | •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR •Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S |
| 描述与应用 | •N沟道硅结型场效应晶体管 •小型封装 •高正向转移导纳 1000μs典型值。 （IDSS= 100μA） 1600μs典型值。 （IDSS= 200μA） •包括二极管和高阻力在G - S |