最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 5V |
最大漏极电流Id Drain Current | 30mA |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | |
耗散功率Pd Power Dissipation | 100mW/0.1W |
Description & Applications | Silicon N-Channel MOS FET Features Silicon N-Channel MOS FET VHF amplifier Application |
描述与应用 | 硅N沟道MOS FET 特性 硅N沟道MOS FET VHF放大器应用 |