| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 50mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 27Ω/Ohm @10mA,2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon N-Channel MOS FET For switching Features Silicon N-Channel MOS FET For switching application High-speed switching Wide frequency band Incorporating a built-in gate protection-diode Allowing 2.5V drive |
| 描述与应用 | 硅N沟道MOS FET开关 特性 硅N沟道MOS FET 用于开关应用 高速开关 宽频带 集成了内置栅极保护二极管 允许2.5V驱动 |