| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.24Ω/Ohm @500mA.10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | N-Channel MOS FET FOR HIGH SPEED SWITCHING Directly driven by ICs having a 5V power source Has low on-state resisitance Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor |
| 描述与应用 | N沟道MOS FET用于高速开关 直接带动有5V电源IC 具有低导通状态创制 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数量通过省略偏置电阻 |