| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 4.8Ω/Ohm @10mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.8V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Has high voltage and high-speed switching characteristics |
| 描述与应用 | N沟道MOS FET的切换 直接被带有5V电源的IC驱动 不必考虑驱动电流，因为它的高输入阻抗 具有高电压和高速开关特性 |