| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.28Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Silicon N-Channel MOS FET HIGH SPEED, HIGH CURRENT SWITCHING APPLICATION CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low drain-source on resistance High forward transfer admittance Low leakage current Enhancement mode |
| 描述与应用 | 硅N沟道MOS FET 高高速，大电流开关应用 斩波稳压器，DC-DC转换器和电机驱动应用 低漏源电阻 高正向转移导纳 低漏电流 增强型 |