| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.08Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | Field Effect Transistor Silicon N Channel MOS Type High Speed,High Current DC-DC Converter Relay Drive and Motor Drive Applications\ 4-volt gate drive Low drain-source ON resistance High forward transfer Admittance Low leakage current |
| 描述与应用 | 场效应晶体管 硅N沟道MOS型 高速，高电流DC-DC转换器 继电器驱动器和电机驱动应用\ 4伏栅极驱动 低漏源导通电阻 较强的正向转移导纳 低漏电流 |