| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.4Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Silicon N-Channel MOS FET Application High speed power switching Features Silicon N-Channel MOS FET High speed power switching application Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source Suitable for DC-DC converter, motor drive, power switch, solenoid drive |
| 描述与应用 | 硅N沟道MOS FET 应用 高速功率开关 特性 硅N沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 4 V栅极驱动装置---可从5 V电源驱动 适用于DC-DC转换器，电机驱动，电源开关，螺线管驱动 |