| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 40V |
| 最大漏极电流Id Drain Current | 1mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-3V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | N-CHANNEL MOS SILICON FET Very high speed switching application Features N-Channel MOS silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive |
| 描述与应用 | N沟道MOS硅场效应管 非常高速开关应用 特性 N沟道硅MOS FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动 |