| 最大源漏极电压Vds Drain-Source Voltage | 600V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 4.2Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Features MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Low on-state resistance Low Ciss Built-in G-S gate protecion diode High avalanche capability ratings |
| 描述与应用 | 特性 MOS场效应功率晶体管 开关N沟道功率MOS FET工业用途 低通态电阻 低Ciss 内置G-S栅的法律保护二极管 高雪崩能力评级 |