| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.24Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2055 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters. Features MOS FIELD EFFECT TRANSISTOR New package intermediate between small signal and power types Gate can be driven by 1.5 V Low ON resistance |
| 描述与应用 | MOS场效应晶体管 N沟道MOS FET高速开关 2SK2055是一个N沟道MOS场效应管的垂直型和 是一种开关元件，可以直接驱动的输出 IC工作在5 V。 该产品具有低导通电阻和一流的开关 特点，是理想的驱动执行器和DC/ DC 转换器。 特性 MOS场效应晶体管 小信号和新的软件包之间的中间 电源类型 栅极可以由1.5 V驱动 低导通电阻 |