| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 500mA/0.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.41Ω/Ohm @300mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuator, such as motors and DC/DC converters. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING • Low ON resistance • High switching speed • Low parasitic capacitance |
| 描述与应用 | MOS场效应晶体管 N沟道MOS FET高速开关 2SK2109是一个N沟道MOS FET的垂直型 是一种开关元件，可以直接驱动的输出 IC工作在5 V。 该产品具有低导通电阻和一流的开关 特点，是理想的，如电机驱动致动器 和DC / DC转换器。 特性 N沟道MOS FET高速开关 •低导通电阻 •高开关速度 •低寄生电容 |