| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 7V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 16Ω/Ohm @10mA,2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.1V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders. Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING Capable of drive gate with 1.5 V Because of high input impedance, there is no need to consider driving current Bias resistance can be omitted, enabling reduction in total number of parts |
| 描述与应用 | MOS场效应晶体管 N沟道MOS FET 高速开关 2SK2158是一个N沟道垂直型MOS场效应管，具有工作电压低至1.5 V。由于它可以 一个低电压驱动，这是没有必要的，以考虑 2SK2158是驱动电流，适合用于在低电压 立体声耳机套和摄像机等便携式系统。 特性 N沟道MOS FET高速开关 能够用1.5 V驱动门 由于输入阻抗高，也没有必要考虑驱动电流 偏压电阻可以省略，能够减少部分总数 |