| 最大源漏极电压VdsDrain-Source Voltage | 30v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -30v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 1.2~4.5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2~2.5v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •N-Channel Junction Silicon FET Applications · Low-frequency amplifier, analog switch, constant current source. Features · Ultrasmall-sized package permitting 2SK2170- applied sets to be made small and slim. |
| 描述与应用 | •N沟道结硅FET 应用 ·低频放大器，模拟开关，恒 电流源。 特点 ·超小尺寸封装，允许2SK2170 应用设置作出小巧玲珑。 |