| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.35Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Silicon MOS FETs (Small Signal) Silicon N-Channel MOS FET For switching Features Silicon N-Channel MOS FET For switching Low ON-resistance RDS(ON) High-speed switching Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | 硅MOS场效应管（小信号） 硅N沟道MOS FET开关 特性 硅N沟道MOS FET 用于开关 低导通电阻RDS（ON） 高速开关 小功率型封装，允许瘦身套 通过自动插入磁带/盒包装 |