| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.21~0.35ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2~1.2v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •N-Channel Junction Silicon FET •Capacitor Microphone Applications •applied sets to be made small and slim. •Especially suited for use in audio, telephone capacitor microphones. •Excellent voltage characteristic. •Excellent transient characteristic. |
| 描述与应用 | •N沟道结硅FET •电容传声器的应用 •应用集小型和超薄。 •特别适合用于音响，电话电容麦克风。 •优秀的电压特性。 •出色的瞬态特性。 •通过过程FBET。 |