| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 15A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.13Ω/Ohm @10A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-3.5V |
| 耗散功率Pd Power Dissipation | 75W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Features Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型（π-MOSV） 斩波稳压器，DC-DC转换器和电机驱动应用 特性 硅N沟道MOS型 斩波稳压器，DC-DC转换器和电机驱动 应用 4 V栅极驱动 低漏源导通电阻 高正向转移导纳 低漏电流 增强型 |