| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.11Ω/Ohm @2.5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A) |
| 描述与应用 | MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK2857是一个可以由5V电源直接驱动的开关设备。 2SK2857采用了低通态电阻和优良 开关特性，是适合于应用程序，如致动器的驱动程序。 特性 N沟道MOS场效应晶体管 用于高速开关 可以由一个5V电源。 低导通电阻： RDS（on）1 =220mΩ最大。 （VGS=4 V，ID= 1.5 A） RDS（on）2 =150mΩ最大。 （VGS=10V，ID=2.5 A） |