| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3Ω/Ohm @10A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-1.8V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. he 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Can be driven by a 2.5-V power source Low gate cut-off voltage |
| 描述与应用 | MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK2857是一个开关装置，可以直接驱动 由5V电源。 他2SK2857功能低通态电阻和优良的 开关特性，是适合于应用程序，如致动器的驱动程序。 特性 N沟道MOS场效应晶体管 用于高速开关 可以由一个2.5 V的电源 低栅极截止电压 |