| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 5Ω/Ohm @10mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | 2.5V Drive Nch MOS FET Silicon N-channel MOSFET Features 2.5V Drive Nch MOS FET Low on-resistance Fast switching speed Low voltage drive (2.5V) makes this device ideal for portable equipment Drive circuits can be simple Parallel use is easy |
| 描述与应用 | 2.5V驱动N沟道MOS FET 硅N沟道MOSFET 特性 2.5V驱动N沟道MOS FET 低导通电阻 开关速度快 低电压驱动（2.5V）使该器件理想用于便携式设备 驱动电路可以很简单 并行使用容易 |