| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 34A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.013Ω/Ohm @17A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Silicon N Channel MOS FET High Speed Power Switching Features Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS = 40 mΩ typ High speed switching 4 V gate drive device can be driven from 5 V source |
| 描述与应用 | 硅N沟道MOS FET 高速电源开关 特性 硅N沟道MOS FET 高速电源开关 低导通电阻 RDS=40MΩ（典型值） 高速开关 4 V栅极驱动器可驱动从5 V电源 |