| 最大源漏极电压VdsDrain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSSDrain Current |
0.06~0.11ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage |
-0.1~-1v |
| 耗散功率PdPower Dissipation |
200mW/0.2W |
| Description & Applications |
•N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S |
| 描述与应用 |
•N沟道硅结型场效应晶体管 流脑的阻抗变换器 特点 •小型封装 •高正向转移导纳 1000μs典型值。 （IDSS= 100μA） 1600μSTYP。 （IDSS= 200μA） •包括二极管和高阻力在G - S |