| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.32~0.43ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.37~-1v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Small package: SC-89 (TUSM) |
| 描述与应用 | •N沟道硅结型场效应晶体管 特点 •低噪音： -108.5 dB（典型值）。 （VDD= 2.0 V，C= 5 pF的，RL=2.2kΩ上） •特别适用于音频和电话 •小型封装： SC89（TUSM） |