| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.04Ω/Ohm @2A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION he 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 2.5V drive available Low on-state resistance |
| 描述与应用 | MOS场效应晶体管 N-沟道MOS场效应晶体管的开关 说明 他2SK3576是一个开关装置，可驱动直接由2.5 V电源。 该器件具有低通态电阻和优良的 开关特性，是适合于应用程序，如电源开关便携机等。 特性 N沟道MOS场效应晶体管 对于开关 2.5V可用驱动 低通态电阻 |