| 最大源漏极电压VdsDrain-Source Voltage | 55v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -55v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2~6.5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -5v |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | •Silicon N-Channel Junction FET •For low-frequency amplification •For switching Features lLow noise-figure (NF) lHigh gate to drain voltage VGDO lMini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | •硅N沟道结型场效应管 •对于低频放大 •切换功能 LLOW噪声系数（NF） lHigh栅漏电压VGDO lMini型封装，让瘦身套和自动 通过插入磁带/盒包装 |