| 最大源漏极电压VdsDrain-Source Voltage | 10V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 320mA-600mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -6V |
| 耗散功率PdPower Dissipation | 1W |
| Description & Applications | High Frequency FETs.
GaAs N-Channel MES FET.
For UHF medium output power amplification.
Features
. Large collector dissipation PC.
. Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 | 高频场效应管。
砷化镓N沟道MES FET。
对于UHF中等输出功率放大。
特点
.大集电极耗散PC。
.小功率型封装，允许瘦身套和通过自动插入磁带/盒包装。 |