| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 10~20ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -2.5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Field Effect Transistor Silicon N Channel Junction Type •High Frequency Amplifier Applications •AM High Frequency Amplifier Applications •Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS (typ.) • Low Ciss: Ciss = 7.5 pF (typ.) |
| 描述与应用 | •场效应晶体管的硅N沟道结型 •高频放大器的应用 •AM高频放大器的应用 •声频放大器的应用 •高| YFS|：| YFS| =25毫秒（典型值） •低CISS：西塞=7.5 pF的（典型值） |