最大源漏极电压VdsDrain-Source Voltage | 50v |
栅源极击穿电压V(BR)GSGate-Source Voltage | -50v |
漏极电流(Vgs=0V)IDSSDrain Current | 0.5~12ma |
关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.25~-4.5v |
耗散功率PdPower Dissipation | 150mW/0.15W |
Description & Applications | •Silicon N-Channel Junction FET AF&RF AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR The 2SK853, 2SK853A are designed for hybrid IC which is designed for use in analog-switch, variable-resistor, RF amplifier and AF amplifier |
描述与应用 | •硅N沟道结型场效应管 AF&RF放大器 N-沟道硅结型场效应晶体管 2SK8532SK853A是专为混合IC,其目的是使用模拟开关,可变电阻器,RF放大器和AF放大器 |