| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 6~14ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -2.5v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | •Silicon N-Channel Junction FET FM Tuner, VHF RF Amplifier Applications • Low reverse transfer capacitance: Crss = 0.025 pF (typ.) • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.) • Recommend operation voltage: 5~15 V |
| 描述与应用 | •硅N沟道结型场效应管 FM调谐器，甚高频射频放大器应用 •低反向传输电容：CRSS= 0.025 PF（典型值） •低噪声系数：NF=1.7分贝（典型值） •高功率增益：GPS=28分贝的（典型值） •推荐工作电压：5〜15 V |