最大源漏极电压Vds Drain-Source Voltage | 15V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 9V |
最大漏极电流Id Drain Current | 30mA |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | -1-1/-0.5-1 |
耗散功率Pd Power Dissipation | 150mW/0.15W |
Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL DUAL GATE MOS TYPE Features Silicon N-Channel MOS FET TV TUNER,VHF RF AMPLIFIER APPLICATIONS TV TUNER VHF MIXER APPLICATIONS Superior cross modulation performance Low reverse transfer capacitance Low noise figure |
描述与应用 | 东芝场效应晶体管的硅频道双栅MOS型 特性 硅N沟道MOS FET 电视调谐器,甚高频射频放大器应用 电视调谐器甚高频混频器应用 高级交叉调制性能 低反向传输电容 低噪声系数 |