| 最大源漏极电压VdsDrain-Source Voltage | -9V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 6mA-20mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.7V -- -1.8V |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTER .GaAs N-channel Dual Gate MES FET. Applications: TV TUNER,UHF RF AMPLIFIER APPLICATIONS. |
| 描述与应用 | 东芝场效应型晶体管 .砷化镓N沟道双栅MES FET .应用; 电视调谐器，超高频 RF放大器. |