| 最大源漏极电压VdsDrain-Source Voltage | -6V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 4mA-16mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.5V -- -1.5V |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTER .GaAs N-channel Dual Gate MES FET .Applications: TV TUNER,UHF RF AMPLIFIER APPLICATIONS. |
| 描述与应用 | 东芝场效应型晶体管. 砷化镓N沟道双栅MES FET. 应用: 电视调谐器，超高频 RF放大器. |