| 最大源漏极电压Vds Drain-Source Voltage | 13V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1-1/0-1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | High Frequency FETs Silicon N-Channel MOS FET For UHF amplification Features lLow noise-figure (NF) lLarge power gain PG Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing |
| 描述与应用 | 高频场效应管 硅N沟道MOS FET 对于UHF扩增 LLOW噪声系数（NF） lLarge功率增益PG 迷你型包装，使瘦身套和自动 通过插入磁带/盒包装 |