| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | 600mA/0.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.6Ω/Ohm @600mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.2V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | N-Channel Enhancement Mode Power MOSFET Description The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features Simple Gate Drive 2KV ESD Rating (Per MIL-STD-883D) Small Package Outline (SOT323) |
| 描述与应用 | N沟道增强模式功率MOSFET 描述 先进的功率MOSFET提供设计师 快速切换的最佳组合，低 导通电阻和成本效益。 简单的栅极驱动器 2KV ESD额定值（每MIL-STD-883D） 小型封装（SOT323 |